GROWTH AND CHARACTERIZATION OF TIN (II) OXIDE (SnO) THIN FILMS AT 0.12 MOLARITY AND ROOM TEMPERATURE FOR DIFFERENT DEPOSITION TIMES AND THEIR POSSIBLE INDUSTRIAL APPLICATIONS
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Abstract
Tin (ll) oxide was successfully deposited on glass based at room temperature using an amplified Solution Growth Technique (SGT) at a concentration of 0.12 molarity for different lengths of time (12, 18, 24, 30 and 36hrs). The glass slides went to degreasing by being submerged in concentrated Hydrochloric acid for three days, then it was rinsed in
distilled water and was main goal was air dried. A T80+ UV/VIS Double beam spectrophotometer was made use of to obtain Absorbance spectra (A) within the wavelength spectrum ranging from 202 to 315nm. The optical properties and solid-state characteristics of the films were calculated from the result gotten and mixed against other deposited thin films. The average optical and solid state properties includes: absorbance (A) = 0.658 - 0.551, transmittance (T) = 0.222 - 0.281, Reflectance (R) = 0.564 - 0.730, absorbing power =5.85 x 10 6 - 4.99 x 10 6m-1 , Refractive index (n) = 7.032 - 12.736, Film thickness (t) = -0.073 - (- 0.063) and bandgap (Eg)= 4.754 - 4.693eV. The deposited films within light range (≈4.0- 5.0eV) finds application in Solar Cells for high energy photons: materials with wider bandgap can capture high energy UV photons, potentially increasing the efficiency of solar cells to improve the standard of living in rural areas.
distilled water and was main goal was air dried. A T80+ UV/VIS Double beam spectrophotometer was made use of to obtain Absorbance spectra (A) within the wavelength spectrum ranging from 202 to 315nm. The optical properties and solid-state characteristics of the films were calculated from the result gotten and mixed against other deposited thin films. The average optical and solid state properties includes: absorbance (A) = 0.658 - 0.551, transmittance (T) = 0.222 - 0.281, Reflectance (R) = 0.564 - 0.730, absorbing power =5.85 x 10 6 - 4.99 x 10 6m-1 , Refractive index (n) = 7.032 - 12.736, Film thickness (t) = -0.073 - (- 0.063) and bandgap (Eg)= 4.754 - 4.693eV. The deposited films within light range (≈4.0- 5.0eV) finds application in Solar Cells for high energy photons: materials with wider bandgap can capture high energy UV photons, potentially increasing the efficiency of solar cells to improve the standard of living in rural areas.
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